Silicon Vertically Integrated Nanowire Field Effect Transistors
نویسندگان
چکیده
منابع مشابه
Laser direct synthesis of silicon nanowire field effect transistors.
We demonstrate a single-step, laser-based technique to fabricate silicon nanowire field effect transistors. Boron-doped silicon nanowires are synthesized using a laser-direct-write chemical vapor deposition process, which can produce nanowires as small as 60 nm, far below the diffraction limit of the laser wavelength of 395 nm. In addition, the method has the advantages of in situ doping, catal...
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ژورنال
عنوان ژورنال: Nano Letters
سال: 2006
ISSN: 1530-6984,1530-6992
DOI: 10.1021/nl060166j